A P- N junction can be formed by diffusing either a P- type impurity ( anode) such as Phosphorous, such as Boron, a N- type impurity, into a N- type bulk silicon wafer, into a P- type bulk silicon wafer. 7 Operating junction storage temperature range ( TJ) . The RHRP15120 is a hyperfast diode with soft recovery. construction datasheet LM302 datasheet, datasheets, pdf National Semiconductor. Schottky Barrier Rectifier junction Page < 1> 05/ 07/ 11 V1. Maximum Ratings are stress ratings only.
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Legal Disclaimer Notice www. com Vishay Revision: 08- Feb- 17 1 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE. Construction • Hot compression molded fiberglass reinforced polyester ( thermoset). Junction Box with Crowned Screw Cover Enclosure Shipping Schedule. 4 to 39 Volts Features x Planar Die Construction x 200mW PowerDissipation Absolute Maximum Ratings Symbol Parameter Rating Unit. ZMOD4410 Datasheet © Integrated Device Technology, Inc.
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3 November 2, List of Tables Table 1. ZMOD4410 Pin Descriptions.